Gallium Nitride (GaN) refers to chemical compound made of gallium and nitrogen which is considered as a wonder material owing to its high band gap energy of 3.4 electron volt. Compared to other semiconductor materials such as silicon, germanium that have band gap energy of 1.14ev and 0.67ev gallium nitride has an edge over these semiconductors in power semiconductors, electronics applications and in power electronics. The global GaN power device market is expected to grow with a CAGR of over 24% during the forecast period of 2016-2023. The high band gap energy of the gallium nitride leverages its wide adoption in power electronics industry. Bigger band gap energy enables gallium nitride to withstand strong electric field enabling production of thinner, more efficient and low resistance power devices. Gallium nitride power devices have a high adoption in medium voltage power application owing to its small size and high efficiency.
The growth in gallium nitride power device market is primarily driven owing to the growing demand of gallium power devices in the radio frequency application. Gallium power devices offers high frequency data bandwidth connections, high power efficiency that according to IEEE spectrum have an efficiency of over 98% in terms of power loss. The deployment of GaN RF power devices by the network providers will ensure that the LTE devices will offer high speeds to the user by utilizing the allotted bandwidth efficiently. High investment in development of 4G and 5G infrastructure are expected to positively influence the gallium nitride power devices market. High adoption of gallium based High-electron-mobility transistor (HEMT) for efficient bandwidth utilization and maximize efficiency, gain and linearity by mobile network operators may reduce operating cost, which will inject growth in gallium nitride power device market. For instance, in 2016 UK government invested a sum of $1.5 billion to boost 5G and fibre connection infrastructure in UK similarly in 2016 US government pledged to spend approximately $400 million for 5G wireless services research. The other factors that drive the gallium nitride power device include growing adoption of GaN power devices in electric vehicle owing to its high-power conversion efficiency, reduction in prices of GaN devices and escalating demand of GaN power devices for wireless charging owing to its fast switching time typically less than 10ms. However, stiff completion from silicon carbide power devices that have a comparable band gap energy and are cost effective compared to gallium nitride power devices and low availability of gallium nitride impedes the growth of gallium nitride power device market.
Source: OBRC Analysis.
The report on global GaN power device market includes segmentation on basis of application and battery type
On the basis of device GaN power device market is sub-segmented into:
- GaN power discrete devices
- GaN power ICs
- GaN power module
On the basis of application GaN power device market is sub-segmented into:
- Consumer Electronics
- IT & Telecommunication
- Automotive
- Aerospace & Defense
- Others
The report scope is widely categorized on the basis of device which includes GaN power discrete devices, GaN power ICs and GaN power module. Moreover, the market revenue estimates and forecast includes revenues from use of GaN in power devices and does not include revenues from SiC power ICs.
The global GaN power device market report has been geographically segmented in:
- North America (U.S. & Canada)
- Asia Pacific (China, India, Japan, RoAPAC)
- Europe (UK, France, Germany, RoE)
- Rest of World
Geographically, North America has the largest share in the GaN power device market owing to high investments in the development of Gallium nitride power devices. For instance, according to power America the U.S. Department of Energy in 2016 announced to grant power America a sum of $ 70 Million over next 5 years. The grant is awarded in order to make wide band gap semiconductors such as silicon carbide and gallium nitride more cost-competitive compared to silicon based power electronics. The market is also driven due to dominance of gallium nitride power device manufacturers in North America GaN power device market. Asia Pacific GaN power device market is expected to grow at the highest rate due to increasing investments in smart grid systems from emerging economies like India and China, growing demand for electric vehicles are the main factors driving GaN power device market.
IT & Telecommunication held the largest share in 2016 owing to high adoption of gallium nitride based power devices for high frequency switching application. However, automotive segment is expected to grow at the highest rate due to increasing adoption of GaN based power inverters in electric vehicles.
The major market players of the global GaN power device market are:
- EFFICIENT POWER CONVERSION CORPORATION
- FUJITSU
- GAN SYSTEMS INC
- INFINEON TECHNOLOGIES AG
- ON SEMICONDUCTOR
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- TEXAS INSTRUMENTS
- OTHERS
These companies are using various strategies such as merger & acquisition, collaboration, partnership and product launch. Whereas, product launch is the key strategy adopted by the companies in the GaN power device market.
For Example; In 2017 Efficient Power Conversion Corp. (EPC) introduced EPC2111, a half bridge enhancement mode monolithic gallium nitride transistor. The company claimed that by integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated.
In 2017 Qorvo, provider of Radio Frequency solutions launched new asymmetric Doherty amplifier GaN-on-SiC QPD2731 transistor solution that features 2 transistors mounted on a single package in order to maximize efficiency, gain and linearity that would help telecom operators to reduce operating costs.
The report covers detailed analysis of companies which comprises overview, SCOT analysis, product portfolio, strategic initiative, strategic analysis, competitive landscape and market share analysis in GaN power device market.
Key reason to buy the report:
- The report includes market estimation, forecast and analysis for the year 2016-2023
- Report includes detailed analysis of different segments such as type of device and industrial application.
- Identify and understand the strength, opportunities, challenges and threat of the GaN power device market.
- Covers detailed analysis of Porters 5 force model and other strategic models and also covers revenues, market share analysis and competitive landscape analysis of major players of GAN power device market.
- Detailed analysis of various the regulatory policies which are affecting the global GaN power device market.
How we are different from others:
At Occam’s we provide an extensive portfolio which is comprehensive market analysis along with the market size, market share, and market segmentations. Our report on global GaN power device market offers detailed analysis of strategic models such as investment vs. adoption model, see saw analysis and others strategic models. Also, the report contains the detailed analysis of application, adoption scenario and decision support for each segment. The report discusses competitive landscape of the GaN power device market, with giving extensive SCOT analysis of key companies.
Key findings of the global GaN power device market.
- Wide adoption of GaN based power devices are expected to drive the GaN power device market
- North America held highest revenue share in 2016.
- IT and Telecom segment held the large revenue share in 2016
- Product launch is the key strategy adopted by players of GaN power device market.
